Crystal plant custom made silicon carbide SiC single crystal substrate 4H-N manufacturer

   SiC single crystal has many excellent properties, such as high thermal conductivity, high saturated electron mobility, and strong resistance to voltage breakdown. It is suitable for preparing high-frequency, high-power, high-temperature and radiation-resistant electronic devices.

Main performance parameters
Growth method	Seed sublimation method, PVT (Physical Vapor Transport)
Crystal structure	Six parties
Lattice constant	a=3.08 Å c=15.08 Å
density	3.21 g/cm 3
direction	Growth axis or deviation <0001> 3.5 º
Bandgap	3.26 eV (indirect)
hardness	9.2 (mohs)
Thermal conductivity@300K	5 W/ cm.k
Dielectric constant	e(11)=e(22)=9.66 e(33)=10.33
size	10x3, 10x5, 10x10, 15x15,, 20x15, 20x20,
	Dia2",Di3",Dia4"
thickness	0.35mm,
polishing	Single-sided or double-sided
Crystal orientation	<0001>±0.5º
Crystal plane orientation accuracy:	±0.5°
Edge orientation accuracy:	2°(Special requirements can reach within 1°)
Bevel wafer	According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed
Ra:	≤5Å (5µm×5µm)
Package	Class 100 clean bag, Class 1000 super clean room