Custom made Gallium Arsenide GaAs single crystal substrate manufacturer from China

Main performance parameters

Single crystal

Doping

Conductivity type

Carrier concentration cm-3

Dislocation density cm -2

Growth method

Standard substrate ( mm )

GaAs

Si

undoped

N

> 5×10 17

< 5×10 5

VGF

VB

Dia 2″×0.35mm

Dia3"x0.35mm

Dia100×0.65mm

Crystal orientation

(100) 0°±0.5°,<111>

(100) 2°±0.5°off toward <111>A

(100)15°±0.5°off toward <111>A

Size (mm)

0 × 25 × 25. . 3 5mm, 10 × 10 × 0. . 3 5mm,. 5 × 10 × 0. . 3 5mm,. 5. 5 × × 0. . 3 5mm

Can be customized according to customer needs, special direction and size of the substrate

Surface roughness

Surface roughness(Ra):<=5A Atomic particle microscope ( AFM ) test report can be provided

polishing

Single-sided or double-sided

Package

Class 100 clean bag, Class 1000 super clean room