SiC single crystal has many excellent properties, such as high thermal conductivity, high saturated electron mobility, and strong resistance to voltage breakdown. It is suitable for preparing high-frequency, high-power, high-temperature and radiation-resistant electronic devices.
SiC single crystal has many excellent properties, such as high thermal conductivity, high saturated electron mobility, and strong resistance to voltage breakdown. It is suitable for preparing high-frequency, high-power, high-temperature and radiation-resistant electronic devices.