Custom made silicon carbide SiC single crystal substrate 4H-N manufacturer from China

   SiC single crystal has many excellent properties, such as high thermal conductivity, high saturated electron mobility, and strong resistance to voltage breakdown. It is suitable for preparing high-frequency, high-power, high-temperature and radiation-resistant electronic devices.

Main performance parameters
Growth method	Seed sublimation method, PVT (Physical Vapor Transport)
Crystal structure	Six parties
Lattice constant	a=3.08 Å c=15.08 Å
density	3.21 g/cm 3
direction	Growth axis or deviation <0001> 3.5 º
Bandgap	3.26 eV (indirect)
hardness	9.2 (mohs)
Thermal conductivity@300K	5 W/ cm.k
Dielectric constant	e(11)=e(22)=9.66 e(33)=10.33
size	10x3, 10x5, 10x10, 15x15,, 20x15, 20x20,
	Dia2",Di3",Dia4"
thickness	0.35mm,
polishing	Single-sided or double-sided
Crystal orientation	<0001>±0.5º
Crystal plane orientation accuracy:	±0.5°
Edge orientation accuracy:	2°(Special requirements can reach within 1°)
Bevel wafer	According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed
Ra:	≤5Å (5µm×5µm)
Package	Class 100 clean bag, Class 1000 super clean room