Custom made Indium arsenide InAs single crystal substrate manufacturer from China

InAs single crystal substrate

In InAs single crystal substrate can be grown as the InAsSb / the In - AsPSb, InNAsSb other heterostructure , that a wavelength 2 ~ 14 [mu] m infrared light emitting device, with InAs single crystal substrate also can be epitaxially grown AlGaSb superlattice structure materials , Production of mid-infrared quantum cascade lasers. . The infrared devices have a good prospect in the field of gas monitoring, and other low-loss optical fiber communication . Further , InAs single crystal having a high electron mobility , is making a Hall over the material of the device. As a single crystal substrate , InAs materials need to have low dislocation density, good lattice integrity, suitable electrical parameters and high uniformity . The main growth method of InP single crystal materials is the traditional liquid-sealed Czochralski technology ( LEC ).  

Crystals	structure	Crystal orientation	Melting point o C	density g/cm 3	Forbidden band width
InAs	cube, a=6.058 A	<100>	942	5.66	0.45

Main performance parameters
Single crystal	Doping	Conductivity type		Carrier concentration cm -3	Mobility (cm 2 /Vs)	Dislocation density (cm -2 )	Standard substrate
InAs	Intrinsic	N		5*10 16	2*10 4	<5*10 4	Φ2″×0.5mm Φ3″×0.5mm
InAs	Sn	N		(5-20)*10 17	>2000	<5*10 4	Φ2″×0.5mm Φ3″×0.5mm
InAs	Zn	P		(1-20) *10 17	100-300	<5*10 4	Φ2″×0.5mm Φ3″×0.5mm
InAs	S	N		(1-10)*10 17	>2000	<5*10 4	Φ2″×0.5mm Φ3″×0.5mm
Size (mm)			Dia50.8x0.5mm, 10×10×0.5mm, 10×5×0.5mm can be customized according to customer needs, special orientation and size of the substrate
Surface roughness			Surface roughness(Ra):<=5A Atomic particle microscopy (AFM) test report can be provided
polishing			Single-sided or double-sided
Package			Class 100 clean bag, Class 1000 super clean room