Crystal plant custom made Indium arsenide InAs single crystal substrate manufacturer from China

InAs single crystal substrate

In InAs single crystal substrate can be grown as the InAsSb / the In - AsPSb, InNAsSb other heterostructure , that a wavelength 2 ~ 14 [mu] m infrared light emitting device, with InAs single crystal substrate also can be epitaxially grown AlGaSb superlattice structure materials , Production of mid-infrared quantum cascade lasers. . The infrared devices have a good prospect in the field of gas monitoring, and other low-loss optical fiber communication . Further , InAs single crystal having a high electron mobility , is making a Hall over the material of the device. As a single crystal substrate , InAs materials need to have low dislocation density, good lattice integrity, suitable electrical parameters and high uniformity . The main growth method of InP single crystal materials is the traditional liquid-sealed Czochralski technology ( LEC ).