Crystal plant custom made Gallium antimonide GaSb single crystal substrate manufacturer from China

GaSb single crystal substrate
GaSb single crystals match the lattice constants of various ternary and quaternary, III-V compound solid solutions with bands in the 0.8~4.3um wide spectral range because of its lattice constant , because GaSb can be used as a substrate material Used to prepare lasers and detectors suitable for certain infrared optical fiber transmission, GaSb is also predicted to have a lattice-limited mobility greater than GaAs , making it a potential application prospect in the manufacture of microwave devices. The main growth methods of GaS single crystal materials include traditional liquid-sealed Czochralski technology ( LEC ), improved LEC technology, moving heating method / vertical gradient solidification technology ( VGF ) / vertical Bridgman

Crystals	Structure	Crystal orientation	Melting point o C	Density g/cm 3	Forbidden band width
GaSb	Cubic a=6.094A	<100>	712	5.53	0.67

Main performance parameters
Single crystal	Doping	Conductivity type		Carrier concentration cm -3	Mobility (cm 2 /Vs)	Dislocation density (cm -2 )	Standard substrate
GaSb	Intrinsic	P		(1-2)*10 17	600-700	《1*10 4	Φ2″×0.5mm Φ3″×0.5mm
GaSb	Zn	P		(5-100)*10 17	200-500	《1*10 4	Φ2″×0.5mm Φ3″×0.5mm
GaSb	Te	N		(1-20) ´ 10 17	2000-3500	《1*10 4	Φ2″×0.5mm Φ3″×0.5mm
Size (mm)			Dia50.8x0.5mm, 10×10×0.5mm, 10×5×0.5mm can be customized according to customer needs, special orientation and size of the substrate
Surface roughness			Surface roughness(Ra):<=5A Atomic particle microscopy (AFM) test report can be provided
polishing			Single-sided or double-sided
Packing			Class 100 clean bag, Class 1000 super clean room