InAs single crystal substrate can grow InAsSb/In-AsPSb, InNAsSb and other heterojunction materials to produce infrared light-emitting devices with wavelengths of 2-14μm.
SiC single crystal has many excellent properties, such as high thermal conductivity, high saturated electron mobility, and strong resistance to voltage breakdown. It is suitable for preparing high-frequency, high-power, high-temperature and radiation-resistant electronic devices.
The lattice mismatch rate between lithium aluminate single crystal and gallium nitride is very small (1.4% for lithium aluminate), making it a high-quality substrate for gallium nitride thin films.