SrTiO3 perovskite crystal structure with a variety of good lattice matching material, which is a variety of high-temperature superconducting oxide thin film and the substrate material quality, but also widely used in special optical window and the highest quality sputtering target timber.HB company has an independent set of production line, from high-quality SrTiO3 powder, SrTiO3 single crystal polished to a variety of sizes epitaxial substrate for high-quality low-cost global provider of monocrystalline and SrTiO3 substrates. Major capability parameter Crystal structure M6 Growth method Blaze method Unit cell constant a=3.905Å Melt point（℃） 2080 Density（g/cm3） 5.122（g/cm3） Hardness 6-6.5（mohs） Thermal expansion（/℃） 9.4×10-6 Dielectric constants ε=5.20 Chemical stability Insoluble in water Tangent loss ~5×10-4（300k） ~3×10-4（77k） Size 10×3m、10×5m、10×10mm、15×15mm、20×15mm Special size and orientation are available upon request Thickness 0.5mm、1.0mm Size tolerances <±0.1mm Thickness tolerances <±0.015mmspecial in<±0.005mm） Polishing Single or double redirection precision ±0.5° Redirection the edge: 2°（special in 1°） Crystal orientation <100>、<110>、<111> Pack 100 clean bag，1000 exactly clean bag

Potassium tantalate (KTaO3, KT for short) single crystal has a stable cubic structure and can be used to make laser modulators, digital deflectors and semiconductor devices.

Yttrium doped zirconia needs to be added as stabilizer, with a common concentration of 13 mol%, YSZ has the characteristics of good mechanical and chemical stability and low cost

The strontium lanthanum aluminate crystal has no twinning and phase transition from the melting point to the low temperature.

The lattice mismatch rate between lithium aluminate single crystal and gallium nitride is very small (1.4% for lithium aluminate), making it a high-quality substrate for gallium nitride thin films.

SiC single crystal has many excellent properties, such as high thermal conductivity, high saturated electron mobility, and strong resistance to voltage breakdown. It is suitable for preparing high-frequency, high-power, high-temperature and radiation-resistant electronic devices.

InAs single crystal substrate can grow InAsSb/In-AsPSb, InNAsSb and other heterojunction materials to produce infrared light-emitting devices with wavelengths of 2-14μm. 

GaSb can be used as a substrate material to prepare lasers and detectors suitable for some infrared fiber transmission.