Ceramic factory Aluminum nitride AlN Ceramic substrate manufacturer from China

      AlN ceramic substrate is a new generation of high-performance ceramic substrate, with high thermal conductivity (theoretical value is 319W/mK, commercial AlN substrate thermal conductivity is greater than 140W/mk), low dielectric constant ( 8.8) and dielectric loss (~4×104), and thermal expansion coefficient (4.4×10-4/℃) matched with silicon, chemical composition  AI 65.81% , N 34.19% , specific gravity 3.261g/cm3 , white Or off-white, colorless and transparent single crystal, the sublimation decomposition temperature under normal pressure is 2450℃ .

       Aluminum nitride ceramic substrate, high thermal conductivity, good electrical performance, thermal expansion coefficient close to that of Si wafer , high strength, high temperature resistance, chemical corrosion resistance, high resistivity, low dielectric loss, non-toxicity, it is a substitute for BeO ceramics The ideal material is an ideal large-scale integrated circuit heat dissipation substrate and packaging material.

      Main be applied: high density hybrid circuits, microwave power devices, power electronic devices, optoelectronic components, semiconductors and other products made of high-performance refrigeration substrate material and the encapsulating material, widely used in communications devices, the LED of high brightness, power electronics And other industries.

• High thermal conductivity
• The coefficient of thermal expansion is close to Si
• Excellent insulation properties
• Low dielectric constant and dielectric loss