Major capability parameter Growth Method orthogonal Unit cell constant a=5.43、b=5.50、c=7.71 Melt point（℃） 1600℃ Density 7.57g/cm3 Dielectric constants 25 Growth method GZ Size 10x3，10x5，10x10，15x15，，20x15，20x20， Ф15,Ф20，Ф1″，Ф2″,Ф2.6″ Thickness 0.5mm，1.0mm Polishing Single or double Crystal orientation ＜100＞  ＜110＞  ＜111＞ redirection precision ±0.5° Redirection the edge: 2°（special in 1°） Angle of crystalline Special size and orientation are available upon request Ra: ≤5Å（5µm×5µm） Pack 100 clean bag，1000 exactly clean bag

It is mainly used as a substrate for epitaxial thin film growth of high temperature superconductors (such as YBCO) and magnetic materials.