Item NO.:
GS-C007Payment:
L/C、 Western Union、 D/P、 T/TProduct Origin:
Anhui, ChinaMax Size:
25*25mmOrientation:
<0001>、<1-100>、<11-20>Package:
100 clean bag,1000 exactly clean bagProduct Detail
Process flow
Packaging
Transportation
FAQ
ZnO material is a kind of direct band gap wide gap semiconductor material. It is a kind of multifunctional crystal with luminescence, electro-optic, scintillation, semiconductor and other properties. It is an excellent substrate material for ZnO, Gan epitaxial films and devices. It has great development potential in short wavelength light-emitting devices, such as LEDs and LDS, and has become another research hotspot in the field of wide gap semiconductor after Gan.
Purity wt% Impurity: wt% |
> 99.99 |
Crystal Structure |
Hexagonal: a= 3.252Å, c = 5.313Å |
Growth Method |
Hydrothermal |
Hardness |
4 moh scale |
Density |
5.7 g/cm3 |
Melt Point |
1975 oC |
Specific Heat |
0.125 cal/gm |
Thermoelectric Constant |
1200 mV /oK @ 300 oC |
Thermal Conductivity |
0.006 cal/cm/ oK |
Thermal Expansion |
2.90 x 10-6/oK |
Transmission Range |
0.4 - 0.6 m > 50% at 2 mm |
Dislocation Density |
<0001> plane <100 / cm2 |