The lattice mismatch rate between lithium aluminate single crystal and gallium nitride is very small (1.4% for lithium aluminate), making it a high-quality substrate for gallium nitride thin films.
SiC single crystal has many excellent properties, such as high thermal conductivity, high saturated electron mobility, and strong resistance to voltage breakdown. It is suitable for preparing high-frequency, high-power, high-temperature and radiation-resistant electronic devices.
InAs single crystal substrate can grow InAsSb/In-AsPSb, InNAsSb and other heterojunction materials to produce infrared light-emitting devices with wavelengths of 2-14μm.